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TC58NYG1S3HBAI6

Part Number	TC58NYG1S3HBAI6
Manufacturer	Toshiba
Description	2 GBIT (256M x 8-BIT) CMOS NAND E2PROM
Published	Mar 10, 2018
Datasheet	TC58NYG1S3HBAI6 PDF File

Features

TC58NYG1S3HBAI6

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2 GBIT (256M  8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NYG1S3HBAI6 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory...

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2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
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