TC58FVT641/B641FT/XB-70,-10
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
64-MBIT (8M × 8 BITS / 4M × 16 BIT...
TC58FVT641/B641FT/XB-70,-10
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE
CMOS
64-MBIT (8M × 8 BITS / 4M × 16 BITS)
CMOS FLASH MEMORY
DESCRIPTION
The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVT641/B641 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT641/B641 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.
FEATURES
Power supply
voltage
Block erase architecture
VDD = 2.7 V~3.6 V
Operating temperature Ta = −40°C~85°C
Organization 8M × 8 bits / 4M × 16 bits
Functions Simultaneous Read/Write
Auto Program, Auto Erase
8 × 8 Kbytes / 127 × 64 Kbytes Boot block ...
