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TC58BYG1S3HBAI6

Part Number	TC58BYG1S3HBAI6
Manufacturer	Toshiba
Description	2 GBIT (256M x 8-BIT) CMOS NAND E2PROM
Features	TC58BYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM DESCRIP...
Published	Mar 10, 2018
Datasheet	TC58BYG1S3HBAI6 PDF File

Features

TC58BYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BYG1S3HBAI6 is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory...

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