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TC58BVG0S3HTAI0
1 GBIT (128M x 8-BIT) CMOS NAND E2PROM
Description
TC58BVG0S3HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE
CMOS
1 GBIT (128M × 8 BIT)
CMOS
NAND E2PROM DESCRIPTION The TC58BVG0S3HTAI0 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static regis...
Toshiba
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