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TC55V16256JI-15 Datasheet

Part Number TC55V16256JI-15
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet TC55V16256JI-15 DatasheetTC55V16256JI-15 Datasheet (PDF)

TC55V16256JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fa.

  TC55V16256JI-15   TC55V16256JI-15






Part Number TC55V16256JI-12
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet TC55V16256JI-15 DatasheetTC55V16256JI-12 Datasheet (PDF)

TC55V16256JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fa.

  TC55V16256JI-15   TC55V16256JI-15







MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55V16256JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access. Data byte control signals ( LB , UB ) provide lower and upper byte access. This device is well suited to cache memory applications where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL compatible. The TC55V16256JI/FTI is available in plastic 44-pin SOJ and 44-pin TSOP with 400mil width for high density surface assembly. The TC55V16256JI/FTI guarantees −40° to 85°C operating temperature so it is suitable for use in wide operating temperature system. www.DataSheet4U.com FEATURES • Fast access time (the following are maximum values) TC55V16256JI/FTI-12:12 ns TC55V16256JI/FTI-15:15 ns Low-power dissipation (the following are maximum values) Cycle Time Operation (max) 12 230 15 200 20 170 25 150 ns mA • • • • • • • Standby:10 mA (both devices) Single power supply voltage of 3.3 V ± 0.3 V Fully static operation All inputs and outputs are LVTTL compatible Output buffer control using OE Data byte control using LB (I/O1 to.


2009-01-18 : VSC8221    VSC8223    VSC8228    IRS2453DPBF    IRS2453DSPBF    TC55V16100FT-10    TC55V16100FT-12    TC55V16100FT-15    TC55V16100FTI-12    TC55V16100FTI-15   


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