TC55B4256J-15

TOSHIBA TC55B4256]-12/15/20 SILICON GATE BiCMOS 262,144 WORD x 4 BIT BiCMOS STATIC RAM Description The TC55B4256J is a 1,048,576 bit high speed BiCMOS static random access memory organized as 262,144 words by 4 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation. The TC55B4256J features low power dissipation when the device is deselected using chip enable (CE). The TC55B4256J is suitable for use in applications where high speed is required such as cache memory, high speed storage, and main memory. All inputs and outputs are TIL compatible. The TC55B4256J is available in a 400mil width, 28-pin SOJ suitable for high density surface assembly. Features Fast access time - TC55B4256J-12 12ns (max.) - TC55B4256J-15 15ns (max.) - TC55B4256J-20 20ns (max.) Low power dissipation - Operation: - TC55B4256J-12 130mA (max.) - TC55B4256J-15 130mA (max.) - TC55B4256J-20 130mA (max.) - Standby: 12mA (max.) ...