TRANSCOM
TC1102
January 2002
Super Low Noise GaAs FETs
FEATURES Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 % DC Tested PHOTO ENLARGEMENT
DESCRIPTION The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor ...
