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T2500D

ON Semiconductor

Silicon Bidirectional Thyristors

T2500D Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light d...


ON Semiconductor

T2500D

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Description
T2500D Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. Features http://onsemi.com Blocking Voltage 400 V All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability High Surge Current Capability 60 A Peak at TC = 80°C Pb−Free Package is Available* TRIACS 6 AMPERES RMS 400 VOLTS MT2 G MT1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (Sine Wave 50 to 60 Hz, TJ = −40 to +100°C, Gate Open) On−State RMS Current (TC = +80°C) (Full Cycle Sine Wave 50 to 60 Hz) Peak Non−repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (TC = +80°C, Pulse Width = 10 msec) Average Gate Power (TC = +80°C, t = 8.3 ms) Peak Gate Current (Pulse Width = 10 msec) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg Value 400 Unit V MARKING DIAGRAM 6.0 60 15 16 0.2 4.0 −40 to +125 −40 to +150 A A www.DataSheet4U.com A2s W W A °C °C A Y WW G 1 T2500DG AYWW TO−220AB CASE 221A STYLE 4 = Assembly Location = Year = Work Week = Pb−Free Package THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Maximum Lead Temperature fo...




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