DatasheetsPDF.com

T1800GB45A Datasheet

Part Number T1800GB45A
Manufacturers IXYS
Logo IXYS
Description Insulated Gate Bi-Polar Transistor
Datasheet T1800GB45A DatasheetT1800GB45A Datasheet (PDF)

Date:- 10 Aug, 2016 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T1800GB45A Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak forwar.

  T1800GB45A   T1800GB45A






Insulated Gate Bi-Polar Transistor

Date:- 10 Aug, 2016 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T1800GB45A Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak forward current, tp=1ms, Diode Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) Maximum power dissipation, IGBT (Note 2) Critical diode di/dt (note 3) Operating temperature range. Storage temperature range. Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 200nH. 4) Half-sinewave, 125°C Tj initial. MAXIMUM LIMITS 1800 3600 1800 3600 38.6 42.5 13.7 3500 -40 to +125 -40 to +125 UNITS A A A A kA kA kW A/µs °C °C Data Sheet T1800GB45A Issue 2 Page 1 of 8 August, 2016 Characteristics IGBT Characteristics PARAMETER VCE(sat) Collector – emitter saturation voltage VT0 rT VGE(TH) ICES IGES Cies td(on) tr(V) Qg(on) Eon td(off) tf(I) Qg(off) Eoff Threshold voltage Slope resistance Gate threshold voltage Collector – emitter cut-off current Gate leakage current Input capacitance Turn-on delay time Rise time Turn-on gate charge Turn-on energy Turn-o.


2017-08-01 : R0487YC12E    R0487YC12D    R0472YC16F    R0472YC16E    R0472YC12F    R0472YC12E    2N6380    K0560QE650    K0560QE600    K0445LG650   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)