SiHFU9210

IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 200 VGS = - 10 V 8.9 2.1 3.9 Single S 3.0 DPAK (TO-252) D IPAK (TO-251) D G GS GD S D P-Channel MOSFET FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Surface Mount (IRFR9210, SiHFR9210) Straight Lead (IRFU9210, SiHFU9210) Available in Tape and Reel P-Channel Fast Switching Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and Halogen-free SiHFR9210-GE3 Lead (Pb)-free IRFR9210PbF SiHFR9210-E3 Note a. See device orientation. DPAK (TO-252) SiHFR9210TR-GE3 IRFR9210TRPbFa SiHFR9210T-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continu...