www.vishay.com
IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
D G
GS
GD S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC)
500
VGS = 10 V
3.0
19
3.3
Qgd (nC) Configuration
13 Single
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface-mount (IRFR420, SiHFR420)
• Straight lead (IRFU420, SiHFU420)
• Available in tape and reel • Fast switching
Available
• Ease of paralleling
•.
Power MOSFET
www.vishay.com
IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
D G
GS
GD S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC)
500
VGS = 10 V
3.0
19
3.3
Qgd (nC) Configuration
13 Single
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface-mount (IRFR420, SiHFR420)
• Straight lead (IRFU420, SiHFU420)
• Available in tape and reel • Fast switching
Available
• Ease of paralleling
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and halogen-free
SiHFR420-GE3 IRFR420PbF-BE3
Lead (Pb)-free
IRFR420PbF
Note a. See device orientation
DPAK (TO-252) SiHFR420TR-GE3 a IRFR420TRPbF-BE3 IRFR420TRPbF a
DPAK (TO-252) SiHFR420TRL-GE3 a IRFR420TRLPbF-BE3 IRFR420TRLPbF a
DPAK (TO-252) SiHFR420TRR-GE3 a IRFR420TRRPbF a
IPAK (TO-251) SiHFU420-GE3 IRFU420PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless other.