SiHFU320

www.vishay.com IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 1.8 20 3.3 11 Single FEATURES Dynamic dV/dt rating Repetitive avalanche rated Surface-mount (IRFR320,SiHFR320) Straight lead (IRFU320,SiHFU320) Available in tape and reel Fast switching Available Ease of paralleling Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free SiHFR320-GE3 IRFR320PbF-BE3 Lead (Pb)-free IRFR320PbF Note a. See device orientation DPAK (TO-252) SiHFR320TRL-GE3a IRFR320TRLPbF-BE3 IRFR320TRLPbFa DPAK (TO-252) SiHFR320TR-GE3 a IRFR320TRPbF-BE3 IRFR320TRPbF a DPAK (TO-252) - IPAK (TO-251) SiHFU320-GE3 IRFR320TRRPbF a IRFU320PbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARA...