www.vishay.com
IRFR110, SiHFR110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qg...
www.vishay.com
IRFR110, SiHFR110
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
8.3 2.3 3.8 Single
0.54
D
DPAK (TO-252)
D
G
GS
S N-Channel
MOSFET
FEATURES
Dynamic dV/dt Rating Repetitive Avalanche Rated Surface Mount (IRFR110, SiHFR110) Available in Tape and Reel Fast Switching Ease of Paralleling Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252) SiHFR110-GE3 IRFR110PbF SiHFR110-E3
Note a. See device orientation.
DPAK (TO-252) SiHFR110TRL-GE3 IRFR110TRLPbFa SiHFR110TL-E3a
DPAK (TO-252) SiHFR110TR-GE3 IRFR110TRPbFa SiHFR110T-E3a
DPAK (TO-252) SiHFR110TRR-GE3 IRFR110TRRPbFa SiHFR110TR-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Linear Derating Factor (PCB Mount)...