www.vishay.com
IRFR214, IRFU214, SiHFR214, SiHFU214
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (...
www.vishay.com
IRFR214, IRFU214, SiHFR214, SiHFU214
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 V
8.2 1.8 4.5 Single
2.0
D
FEATURES
Dynamic dV/dt Rating Repetitive Avalanche Rated Surface Mount (IRFR214, SiHFR214) Straight Lead (IRFU214, SiHFU214) Available in Tape and Reel Fast Switching Ease of Paralleling Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
DPAK (TO-252)
D
IPAK (TO-251)
D
G
GS
GD S
S N-Channel
MOSFET
DESCRIPTION
Third generation power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note a. See device orientation.
DPAK (TO-252) SiHFR214-GE3 IRFR214PbF SiHFR214-E3
DPAK (TO-252) SiHFR214TRL-GE3 IRFR214TRLPbFa SiHFR214TL-E3a
DPAK (TO-252) SiHFR214TR-GE3 IRFR214TRPbFa SiHFR214T-E3a
DPAK (TO-252) SiHFR214TRR-GE3 -
IPAK (TO-251) SiHFU214-GE3 IRFU214PbF SiHFU214-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Sou...