SiHFP32N50K

IRFP32N50K, SiHFP32N50K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 190 59 84 Single D FEATURES 500 0.135 Low Gate Charge Qg Results in Simple Drive Requirement Ruggedness Available Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Fully Characterized Capacitance and Avalanche Voltage and Current Low RDS(on) Lead (Pb)-free Available www.DataSheet4U.com TO-247 G APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply S N-Channel MOSFET S D G High Speed Power Switching Hard Switching and High Frequency Circuits ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP32N50KPbF SiHFP32N50K-E3 IRFP32N50K SiHFP32N50K ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc for 10 s 6-32 or M3 screw Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque TC = 25 °C EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 500 ± 30 32 20 130 3.7 450 32 46 460 13 - 55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V Notes a. Repetitive rating; pulse width limited by maximum junc...