SiHFP15N60L

IRFP15N60L, SiHFP15N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 100 30 46 Single D FEATURES 600 0.385 Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications Lower Gate Charge Results in Simple Drive Requirements Available RoHS* COMPLIANT Enhanced dV/dt Capabilities Offer Improved Ruggedness Higher Gate Voltage Threshold Offers Improved Noise Immunity Lead (Pb)-free Available www.DataSheet4U.com TO-247 G APPLICATIONS Zero Voltage Switching SMPS Telecom and Server Power Supplies S N-Channel MOSFET S D G Uninterruptible Power Supplies Motor Control Applications ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP15N60LPbF SiHFP15N60L-E3 IRFP15N60L SiHFP15N60L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw LIMIT 600 ± 30 15 9.7 60 2.3 320 15 28 280 10 - 55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a....