IRFP15N60L, SiHFP15N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (...
IRFP15N60L, SiHFP15N60L
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 100 30 46 Single
D
FEATURES
600 0.385
Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications Lower Gate Charge Results in Simple Drive Requirements
Available
RoHS*
COMPLIANT
Enhanced dV/dt Capabilities Offer Improved Ruggedness Higher Gate
Voltage Threshold Offers Improved Noise Immunity Lead (Pb)-free Available
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TO-247
G
APPLICATIONS
Zero
Voltage Switching SMPS Telecom and Server Power Supplies
S N-Channel
MOSFET
S D G
Uninterruptible Power Supplies Motor Control Applications
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-247 IRFP15N60LPbF SiHFP15N60L-E3 IRFP15N60L SiHFP15N60L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw LIMIT 600 ± 30 15 9.7 60 2.3 320 15 28 280 10 - 55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V
Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque
Notes a....