www.vishay.com
IRFL110, SiHFL110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qg...
www.vishay.com
IRFL110, SiHFL110
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
8.3 2.3 3.8 Single
0.54
D
SOT-223 D
S D G
G
Marking code: FB
S N-Channel
MOSFET
FEATURES
Surface mount
Available in tape and reel
Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling Simple drive requirements
Available
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION Third generation power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note a. See device orientation.
SOT-223 SiHFL110-GE3 IRFL110PbF SiHFL110-E3
SOT-223 SiHFL110TR-GE3 a IRFL110TRPbF a SiHFL110T-E3 a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current
Puls...