IRFIBF20G, SiHFIBF20G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC...
IRFIBF20G, SiHFIBF20G
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 38 4.7 21 Single
D
FEATURES
Isolated Package
900 8.0
High
Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Dynamic dV/dt Rating Low Thermal Resistance Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK
G
S
G D S
N-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 FULLPAK IRFIBF20GPbF SiHFIBF20G-E3 IRFIBF20G SiHFIBF20G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junct...