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SiHFI630G
Power MOSFET
Description
IRFI630G, SiHFI630G Vishay Siliconix Power
MOSFET
PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 43 7.0 23 Single D FEATURES 200 0.40 www.DataSheet4U.com TO-220 FULLPAK Isolated Package High
Voltage
Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm Dynamic dV/dt Rati...
Vishay Siliconix
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