IRFI614G, SiHFI614G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
IRFI614G, SiHFI614G
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 8.2 1.8 4.5 Single
D
FEATURES
250 2.0
Isolated Package High
Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm Dynamic dV/dt Rating Low Thermal Resistance Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
www.DataSheet4U.com TO-220 FULLPAK
DESCRIPTION
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
G
S
G D S
N-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 FULLPAK IRFI614GPbF SiHFI614G-E3 IRFI614G SiHFI614G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak...