IRFD9210, SiHFD9210
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
IRFD9210, SiHFD9210
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com - 200 VGS = - 10 V 8.9 2.1 3.9 Single
S
FEATURES
Dynamic dV/dt Rating
3.0
Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel Fast Switching Ease of Paralleling Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
HEXDIP
G
DESCRIPTION
The Power
MOSFETs technology is the key to Vishay advanced line of Power
MOSFET transistors. The efficient geometry and unique processing of the Power
MOSFETs design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
S D
G D P-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free SnPb HEXDIP IRFD9210PbF SiHFD9210-E3 IRFD9210 SiHFD9210
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for ...