SiHFD320

www.vishay.com IRFD320, SiHFD320 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 20 3.3 11 Single 1.8 D HVMDIP S G D G S N-Channel MOSFET FEATURES Dynamic dV/dt rating Repetitive avalanche rated For automatic insertion RoHS COMPLIANT End stackable Fast switching Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free SnPb HVMDIP IRFD320PbF SiHFD320-E3 IRFD320 SiHFD320 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor Single Pulse Avalanche Energy b Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery dV/dt c VGS at 10 V TA = 25 °C TA = 100 °C TA = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage T...