IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (...
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
800 VGS = 10 V
78 9.6 45 Single
3.0
I2PAK (TO-262)
D2PAK (TO-263)
D
G
G SD GD S
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free Note a. See device orientation.
S N-Channel
MOSFET
D2PAK (TO-263) SiHFBE30S-GE3 IRFBE30SPbF SiHFBE30S-E3
FEATURES Halogen-free According to IEC 61249-2-21
Definition Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
D2PAK (TO-263) SiHFBE30STRL-GE3a IRFBE30STRLPbFa SiHFBE30STL-E3a
I2PAK (TO-262) SiHFBE30L-GE3 IRFBE30LPbF SiHFBE30L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C TC = 100 °C
TC = 25 °C
VDS VGS
ID
IDM
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torq...