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SiHFBC40S Datasheet

Part Number SiHFBC40S
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFBC40S DatasheetSiHFBC40S Datasheet (PDF)

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 600 VGS = 10 V 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration Single 1.2 D I2PAK (TO-262) D2PAK (TO-263) G SD D G S G S N-Channel MOSFET ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHFBC40S-GE3 Lead (Pb)-free Note a. See device orientation. IRFBC40SPbF SiHFBC40S-E3 FEATURES • Halogen-free According to IEC 61249-2-21 Definiti.

  SiHFBC40S   SiHFBC40S






Part Number SiHFBC40LC
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFBC40S DatasheetSiHFBC40LC Datasheet (PDF)

IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 39 10 19 Single D FEATURES 600 V 1.2 • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V, VGS Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated Lead (Pb)-free Available Available RoHS* COMPLIANT www.DataSheet4U.com TO-220 DESCRIPTION This new series of low charge Power MO.

  SiHFBC40S   SiHFBC40S







Part Number SiHFBC40L
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFBC40S DatasheetSiHFBC40L Datasheet (PDF)

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 600 VGS = 10 V 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration Single 1.2 D I2PAK (TO-262) D2PAK (TO-263) G SD D G S G S N-Channel MOSFET ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHFBC40S-GE3 Lead (Pb)-free Note a. See device orientation. IRFBC40SPbF SiHFBC40S-E3 FEATURES • Halogen-free According to IEC 61249-2-21 Definiti.

  SiHFBC40S   SiHFBC40S







Part Number SiHFBC40AS
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFBC40S DatasheetSiHFBC40AS Datasheet (PDF)

IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 600 VGS = 10 V 42 Qgs (nC) 10 Qgd (nC) 20 Configuration Single D D2PAK (TO-263) 1.2 G GD S ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. S N-Channel MOSFET D2PAK (TO-263) SiHFBC40AS-GE3 IRFBC40ASPbF SiHFBC40AS-E3 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Driv.

  SiHFBC40S   SiHFBC40S







Part Number SiHFBC40A
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet SiHFBC40S DatasheetSiHFBC40A Datasheet (PDF)

www.vishay.com IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 42 10 20 Single 1.2 D TO-220AB G FEATURES • Low gate charge Qg results in simple drive Requirement • Improved gate, avalanche and dynamic dV/dt ruggedness Available Available • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of complianc.

  SiHFBC40S   SiHFBC40S







Power MOSFET

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 600 VGS = 10 V 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration Single 1.2 D I2PAK (TO-262) D2PAK (TO-263) G SD D G S G S N-Channel MOSFET ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHFBC40S-GE3 Lead (Pb)-free Note a. See device orientation. IRFBC40SPbF SiHFBC40S-E3 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC40L, SiHFBC40L) is available for low-profile applications. D2PAK (TO-263) SiHFBC40STRL-GE3a IRFBC40STRLPbFa SiHFBC40S.


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