SiHFBC40AS

IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 600 VGS = 10 V 42 Qgs (nC) 10 Qgd (nC) 20 Configuration Single D D2PAK (TO-263) 1.2 G GD S ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. S N-Channel MOSFET D2PAK (TO-263) SiHFBC40AS-GE3 IRFBC40ASPbF SiHFBC40AS-E3 FEATURES Halogen-free According to IEC 61249-2-21 Definition Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss Specified Compliant to RoHS Directive 2002/95/EC APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching TYPICAL SMPS TOPOLOGIES Single Transistor Forward D2PAK (TO-263) SiHFBC40ASTRL-GE3a IRFBC40ASTRLPbFa SiHFBC40ASTL-E3a D2PAK (TO-263) SiHFBC40ASTRR-GE3a IRFBC40ASTRRPbFa SiHFBC40ASTR-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recomme...