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SiHFBC20 Datasheet

Part Number SiHFBC20
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFBC20 DatasheetSiHFBC20 Datasheet (PDF)

Power MOSFET IRFBC20, SiHFBC20 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 4.4 18 3.0 8.9 Single D TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generatio.

  SiHFBC20   SiHFBC20






Part Number SiHFBC20S
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFBC20 DatasheetSiHFBC20S Datasheet (PDF)

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 18 3.0 8.9 Single D FEATURES 600 4.4 • • • • • • • • Surface Mount (IRFBC20S/SiHFBC20S) Low-Profile Through-Hole (IRFBC20L/SiHFBC20L) Available in Tape and Reel (IRFBC20S/SiHFBC20S) Dynamic dV/dt Rating 150 °C Operating Temperature Fast Switching Fully Avalanche Rated Lead (Pb)-free Available Available RoHS*.

  SiHFBC20   SiHFBC20







Part Number SiHFBC20L
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFBC20 DatasheetSiHFBC20L Datasheet (PDF)

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 18 3.0 8.9 Single D FEATURES 600 4.4 • • • • • • • • Surface Mount (IRFBC20S/SiHFBC20S) Low-Profile Through-Hole (IRFBC20L/SiHFBC20L) Available in Tape and Reel (IRFBC20S/SiHFBC20S) Dynamic dV/dt Rating 150 °C Operating Temperature Fast Switching Fully Avalanche Rated Lead (Pb)-free Available Available RoHS*.

  SiHFBC20   SiHFBC20







Power MOSFET

Power MOSFET IRFBC20, SiHFBC20 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 4.4 18 3.0 8.9 Single D TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFBC20PbF SiHFBC20-E3 IRFBC20 SiHFBC20 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VDS VGS TC = 25 °C VGS at 10 V ID TC = 100 °C IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) f.


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