SiHFB18N50K

IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 120 34 54 Single D FEATURES 500 0.26 Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT Fully Characterized Capacitance and Avalanche Voltage and Current Low RDS(on) Lead (Pb)-free Available TO-220 APPLICATIONS G S G D S N-Channel MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRFB18N50KPbF SiHFB18N50K-E3 IRFB18N50K SiHFB18N50K ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM Energyb LIMIT 500 ± 30 17 11 68 1.8 EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw 370 17 22 220 7.8 - 55 to + 150 300d 10 W/°C mJ A mJ W V/ns °C N A UNIT V Linear Derating Factor Single Pulse Avalanche Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a. Repetitive rating; pulse width limited by maximum junction temperature...