IRFB17N60K, SiHFB17N60K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (...
IRFB17N60K, SiHFB17N60K
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 99 32 47 Single
D
FEATURES
600 0.35
Smaller TO-220 Package Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Available
RoHS*
COMPLIANT
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Fully Characterized Capacitance and Avalanche
Voltage and Current Lead (Pb)-free Available
TO-220
APPLICATIONS
Switch Mode Power Supply (SMPS)
G S G D S N-Channel
MOSFET
Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 IRFB17N60KPbF SiHFB17N60K-E3 IRFB17N60K SiHFB17N60K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 600 ± 30 17 11 68 2.7 330 17 34 340 11 - 55 to + 150 300d 10 W/°C mJ A mJ W V/ns °C N A UNIT V
Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque
Notes a. Repetitive rating; pulse width limited by maximum junction temp...