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SiHFB11N50A
Power MOSFET
Description
IRFB11N50A, SiHFB11N50A Vishay Siliconix Power
MOSFET
PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 52 13 18 Single D FEATURES 500 0.52 Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche
Voltage
and ...
Vishay Siliconix
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