SiHF840LCL

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 39 10 19 Single D FEATURES 500 0.85 Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs. These device improvements combined with the proven ruggedness and reliability that characterize Power MOSFETs offer the designer a new power transistor standard for switching applications. I2PAK (TO-262) D2PAK (TO-263) G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb Note a. See device orientation. D2PAK (TO-263) IRF840LCSPbF SiHF840LCS-E3 IRF840LCS SiHF840LCS D2PAK (TO-263) IRF840LCSTRRa SiHF840LCSTa I2PAK (TO-262) IRF840LCLPbF SiHF840LCL-E3 IRF840LCL...