IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Max.) () Qg (...
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Max.) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
24 6.3 11 Single
1.40
I2PAK (TO-262)
D2PAK (TO-263)
D
G
SD
D G
S
G
S N-Channel
MOSFET
FEATURES Halogen-free According to IEC 61249-2-21
Definition Low Gate Charge Qg Results in Simple Drive
Requirement Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness Fully Characterized Capacitance and Avalanche
Voltage
and Current Effective Coss specified Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High speed power switching
TYPICAL SMPS TOPOLOGIES Two Transistor Forward Half Bridge and Full Bridge
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note a. See device orientation.
D2PAK (TO-263) SiHF830AS-GE3 IRF830ASPbF SiHF830AS-E3
D2PAK (TO-263) SiHF830ASTRL-GE3a IRF830ASTRLPbFa SiHF830ASTL-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current
Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
VGS at 10 V
TC = 25 °C TC = 100 °C
TA = 25 °C TC = 25 °C
VDS VGS
ID IDM
EAS IAR EAR PD
dV/dt
Operating Junction and Storage Temperature Range Soldering Reco...