Si7905DN

Si7905DN Vishay Siliconix Dual P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () 0.060 at VGS = - 10 V 0.089 at VGS = - 4.5V ID (A) - 6e - 5f Qg (Typ.) 11 nC Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch PowerPAK 1212-8 S1 3.30 mm S1 S2 1 2 3.30 mm G1 S2 3 4 D1 G1 G2 G2 8 7 D1 D2 6 5 D2 Bottom View D1 P-Channel MOSFET D2 P-Channel MOSFET Ordering Information: Si7905DN-T1-E3 (Lead (Pb)-free) Si7905DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 40 ± 20 -5 - 5a, b - 4a, b - 20 - 6e - 2a, b - 15 11.25 20.8 13.3 2.5a, b 1.6a, b - 55 to 150 260 6e Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg °C Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/ppg?73257). ...