Si7856ADP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω)I 0.0037 at VGS = 10 V 0....
Si7856ADP
Vishay Siliconix
N-Channel 30-V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω)I 0.0037 at VGS = 10 V 0.0048 at VGS = 4.5 V
D
FEATURES
(A) Qg (Typ.) 39 23
25
PowerPAK SO-8
Halogen-free available Available TrenchFET® Power
MOSFET RoHS* Optimized for “Low Side” Synchronous COMPLIANT Rectifier Operation ® New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % Rg Tested
APPLICATIONS
6.15 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
5.15 mm
DC/DC Converters Synchronous Rectifiers
D
G
Bottom View Ordering Information: Si7856ADP-T1 Si7856ADP-T1-E3 (Lead (Pb)-free) Si7856ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 s Steady State 30 ± 20 15 12 60 1.6 1.9 1.2 - 55 to 150 260 Unit V
25 20 4.5 5.4 3.4
A
W °C
THERMAL RESISTANCE RATINGS
Parameter Sym Maximum Junction-to-Ambienta t ≤ 10 s Steady State Steady State bol RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit °C/W
Maximum Junction-to-Case (Drain)
Notes: a. Surface Mounted on 1” x 1” FR4 board. b. See Solder Profile (...