Si7856ADP

Si7856ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω)I 0.0037 at VGS = 10 V 0.0048 at VGS = 4.5 V D FEATURES (A) Qg (Typ.) 39 23 25 PowerPAK SO-8 Halogen-free available Available TrenchFET® Power MOSFET RoHS* Optimized for “Low Side” Synchronous COMPLIANT Rectifier Operation ® New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % Rg Tested APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm DC/DC Converters Synchronous Rectifiers D G Bottom View Ordering Information: Si7856ADP-T1 Si7856ADP-T1-E3 (Lead (Pb)-free) Si7856ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 s Steady State 30 ± 20 15 12 60 1.6 1.9 1.2 - 55 to 150 260 Unit V 25 20 4.5 5.4 3.4 A W °C THERMAL RESISTANCE RATINGS Parameter Sym Maximum Junction-to-Ambienta t ≤ 10 s Steady State Steady State bol RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit °C/W Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1” x 1” FR4 board. b. See Solder Profile (...