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Si4888DY Datasheet

Part Number Si4888DY
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description N-Channel MOSFET
Datasheet Si4888DY DatasheetSi4888DY Datasheet (PDF)

Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.007 at VGS = 10 V 0.010 at VGS = 4.5 V ID (A) 16 13 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • High-Efficiency PWM Optimized • 100 % Rg Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4888DY-T1-E3 (Lead (Pb)-free) Si4888DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATIN.

  Si4888DY   Si4888DY






N-Channel MOSFET

Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.007 at VGS = 10 V 0.010 at VGS = 4.5 V ID (A) 16 13 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • High-Efficiency PWM Optimized • 100 % Rg Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4888DY-T1-E3 (Lead (Pb)-free) Si4888DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 16 13 11 8 Pulsed Drain Current IDM ± 50 Continuous Source Current (Diode Conduction)a IS 3.0 1.40 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.5 2.2 1.6 1.0 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 29 65 15 Maximum 35 80 18 Unit °C/W Document Number: 71336 S09-0221-Rev. F, 09-Feb-09 www.vishay.com 1 Si4888DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage .


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