Si4888DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.007 at VGS = 10 V 0.010 at VGS = 4.5 V
ID (A) 16 13
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET • High-Efficiency PWM Optimized
• 100 % Rg Tested
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4888DY-T1-E3 (Lead (Pb)-free) Si4888DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATIN.
N-Channel MOSFET
Si4888DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.007 at VGS = 10 V 0.010 at VGS = 4.5 V
ID (A) 16 13
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET • High-Efficiency PWM Optimized
• 100 % Rg Tested
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4888DY-T1-E3 (Lead (Pb)-free) Si4888DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
16 13
11 8
Pulsed Drain Current
IDM ± 50
Continuous Source Current (Diode Conduction)a
IS 3.0 1.40
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
3.5 2.2
1.6 1.0
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)a
Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State
Symbol RthJA RthJF
Typical 29 65 15
Maximum 35 80 18
Unit °C/W
Document Number: 71336 S09-0221-Rev. F, 09-Feb-09
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Si4888DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
.