Si4830ADY

Si4830ADY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.022 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A) 7.5 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage 30 0.50 at 1 A IF (A) 2.0 FEATURES Halogen-free According to IEC 61249-2-21 Definition LITTLE FOOT® Plus Schottky Si4830DY Pin Compatible PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Asymmetrical Buck-Boost DC/DC Converter D1 S1/D2 G1 S2 G2 1 2 3 4 SO-8 Top View 8 D1 7 D1 6 S1/D2 5 S1/D2 Ordering Information: Si4830ADY-T1-E3 (Lead (Pb)-free) Si4830ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) G1 S1 N-Channel MOSFET D2 Schottky Diode G2 S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID IDM 7.5 5.7 6.0 4.6 30 Continuous Source Current (Diode Conduction)a IS 1.7 0.9 Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C PD TJ, Tstg 2.0 1.1 1.3 0.7 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Steady State Notes: a. Surface Mounted on 1" x 1" FR4 board. Symbol RthJA RthJF MOSFET Typ. Max. 52 62.5 93 110 35 40 SCHOTTK...