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Si4668DY Datasheet

Part Number Si4668DY
Manufacturers Vishay
Logo Vishay
Description N-Channel 25-V (D-S) MOSFET
Datasheet Si4668DY DatasheetSi4668DY Datasheet (PDF)

N-Channel 25-V (D-S) MOSFET Si4668DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 25 0.0125 at VGS = 4.5 V ID (A)a 16.2 13 Qg (Typ.) 12.4 nC S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D Ordering Information: Si4668DY-T1-E3 (Lead (Pb)-free) Si4668DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Synchronous Buck - High Side D G S N-Channel.

  Si4668DY   Si4668DY






N-Channel 25-V (D-S) MOSFET

N-Channel 25-V (D-S) MOSFET Si4668DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 25 0.0125 at VGS = 4.5 V ID (A)a 16.2 13 Qg (Typ.) 12.4 nC S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D Ordering Information: Si4668DY-T1-E3 (Lead (Pb)-free) Si4668DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Synchronous Buck - High Side D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IDM IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operat.


2018-01-18 : 1N4749A    1N4750A    1N4746A    1N4747A    1N4755A    1N4756A    1N4752A    1N4753A    IRF840LC    1N4758A   


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