N-Channel 25-V (D-S) MOSFET
Si4668DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0105 at VGS = 10 V 25
0.0125 at VGS = 4.5 V
ID (A)a 16.2 13
Qg (Typ.) 12.4 nC
S1 S2 S3 G4
SO-8 Top View
8D 7D 6D 5D
Ordering Information: Si4668DY-T1-E3 (Lead (Pb)-free) Si4668DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS
• Synchronous Buck - High Side
D
G
S N-Channel.
N-Channel 25-V (D-S) MOSFET
N-Channel 25-V (D-S) MOSFET
Si4668DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0105 at VGS = 10 V 25
0.0125 at VGS = 4.5 V
ID (A)a 16.2 13
Qg (Typ.) 12.4 nC
S1 S2 S3 G4
SO-8 Top View
8D 7D 6D 5D
Ordering Information: Si4668DY-T1-E3 (Lead (Pb)-free) Si4668DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS
• Synchronous Buck - High Side
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IDM IS
Single Pulse Avalanche Current Avalanche Energy
L = 0.1 mH
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
TA = 70 °C
Operat.