Si1031X

P-Channel 20 V (D-S) MOSFET Si1031R/X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 8 at VGS = - 4.5 V 12 at VGS = - 2.5 V - 20 15 at VGS = - 1.8 V 20 at VGS = - 1.5 V ID (mA) - 150 - 125 - 100 - 30 SC-75A or SC-89 G1 SC-75A (SOT - 416): Si1031R SC-89 (SOT - 490): Si1031X 3D S2 Marking Code: H Top View Ordering Information: Si1031R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1031X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition High-Side Switching Low On-Resistance: 8  Low Threshold: 0.9 V (typ.) Fast Switching Speed: 45 ns TrenchFET® Power MOSFETs: 1.5 V Rated ESD Protected: 2000 V Compliant to RoHS Directive 2002/95/EC APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers BENEFITS Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Si1031R Si1031X Parameter Symbol 5 s Steady State 5 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 6 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currenta TA = 25 °C TA = 85 °C ID IDM - 150 - 140 - 110 - 100 - 500 - 165 - 155 - 150 - 125 - 600 Continuous Source Current (Diode Conduction)a IS - 250 - 200 - 340 - 240 Max...