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SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ISSUE 3 JANUARY 1996 COMPLEMENTARY TYPE PARTMA...
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SOT89 NPN SILICON PLANAR HIGH
VOLTAGE TRANSISTOR
ISSUE 3 JANUARY 1996 COMPLEMENTARY TYPE PARTMARKING DETAIL 7 SXTA92 SID
SXTA42
C
E B SOT89 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE 300 300 6 500 1 -65 to +150 C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
UNIT V V V mA W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cobo 25 40 40 50 6 MHz pF MIN. 300 300 6 0.1 0.1 0.5 0.9 TYP. MAX. UNIT V V V
µA µA
CONDITIONS. IC=100µA, IE=0 IC=1mA, IB=0* IE=100µA, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 IC=20mA, IB=2mA* IC=20mA, IB=2mA* IC=1mA, VCE=10V* IC=10mA, VCE=10V* IC=30mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz
V V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMTA42 datasheet. 3 - 306
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