PNP Silicon Switching Transistor
High current gain: 0.1 mA to 100 mA q Low collector-emitter saturation voltage
q
SXT 3...
PNP Silicon Switching Transistor
High current gain: 0.1 mA to 100 mA q Low collector-emitter saturation
voltage
q
SXT 3906
Type SXT 3906
Marking 2A
Ordering Code (tape and reel) Q68000-A8397
Pin Configuration 1 2 3 B C E
Package1) SOT-89
Maximum Ratings
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Parameter Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Total power dissipation, TS = 100 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point
Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg
Values 40 40 5 200 1 150 – 65 … + 150
Unit V
mA W ˚C
Rth JA Rth JS
≤ ≤
120 50
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SXT 3906
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown
voltage IC = 1 mA Collector-base breakdown
voltage IC = 10 µA Emitter-base breakdown
voltage IE = 10 µA Collector-base cutoff current VCB = 30 V Collector-emitter cutoff current VCE = 30 V, VBE = – 3 V DC current gain IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation
voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-emitter saturation
voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 ICEV hFE 60 80...
