SXB2089Z

SXB2089Z 5MHz to 2500 MHz Medium Power InGaP/GaAs HBT Amplifier SXB2089Z 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description RFMD’s SXB2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 5MHz to 2500MHz Cellular, ISM, WLL, PCS, and W-CDMA applications. It’s high linearity makes it an ideal choice for multi-carrier as well as digital applications. Optimum Technology Matching® Applied  GaAs HBT GaAs MESFET  InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Typical IP3, P1dB, Gain 50 45 IP3 IP3 IP3 40 35 30 25 P1dB Gain P1dB P1dB 20 Gain Gain 15 10 5 0 880 MHz 1960 MHz 2140 MHz Features  High OIP3:+43dBm at 1960 MHz  P1dB:24dBm  High Linearity/ACP Perfor- mance  Robust 2000V ESD, Class 2  SOT-89 Package Applications  PA Driver Amplifier  IF Amplifier  Cellular, PCS, ISM, WLL, W - CDMA Parameter Specification Min. Typ. Small Signal Gain Input VSWR Output Power at 1dB Compression Third Order Intercept Point Noise Figure Channel Power IS-95 Thermal Resistance Device Operating Current 21.5 15.5 23.0 38.0 40.0 120 25.0 23.0 17.0 17.0 1.1 1.4 1.6 1.3 24.0 24.5 24.5 40.0 41.0 43.0 43.0 4.9 4.5 4.7 4.2 16.0 16.3 15.5 15.6 51.3 135 Test Conditions: TA=25°C, Z0=50POUT per tone=+11dBm...