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■ High ruggedness ■ RDS(ON) (Max 1.45 Ω)@VGS=10V ■ Gate Charge (Typ 60nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P 12 3 1.Gate 2.Drain 3.Source General Description This power MOSFET is produced with advanced VDMOS technology of ...

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