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SW630 Datasheet

Part Number SW630
Manufacturers Samwin
Logo Samwin
Description N-Channel MOSFET
Datasheet SW630 DatasheetSW630 Datasheet (PDF)

SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.4 ohm : 9.0 A : 26 nc : 72 W SW630 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter b.

  SW630   SW630






Part Number SW634
Manufacturers Samwin
Logo Samwin
Description N-Channel MOSFET
Datasheet SW630 DatasheetSW634 Datasheet (PDF)

SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 250 V : 0.45 ohm : 8.5 A : 28 nc : 72 W SW634 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology .

  SW630   SW630







Part Number SW630A
Manufacturers SEMIPOWER
Logo SEMIPOWER
Description MOSFET
Datasheet SW630 DatasheetSW630A Datasheet (PDF)

SAMWIN SW630A N-channel TO-220/D-PAK MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.4 Ω)@VGS=10V ■ Gate Charge (Typ 22nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220 TO-252 12 3 1 2 3 BVDSS : 200V ID : 10A RDS(ON) : 0.4ohm 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate cha.

  SW630   SW630







N-Channel MOSFET

SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.4 ohm : 9.0 A : 26 nc : 72 W SW630 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor. D w w w . D a t a S h e e t 4 U . c o m G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain to Source Voltage Continuous Drain Current (@Tc=25℃) Continuous Drain Current (@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (@Tc=25℃) Derating Factor above 25℃ Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 200 9 6.8 36 ±30 160 7.2 5.0 72 0.57 -55~+150 300 Units V A A A V mJ mJ V/ns W W/℃ ℃ ℃ Thermal Characteristics Value Symbol RθJC RθCS RθJA Units Max 1.73 62.5 ℃/ W ℃/ W ℃/ W Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min - Typ 0.5 - 1/6 REV0.1 04..


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