SW601Q

SW601Q Features Low RDS(ON) (Typ 540Ω)@VGS=0V,ID=3mA  High Switching Speed Application:LED,Charger N-channel Depletion mode SOT23 MOSFET SOT23 3 1 2 BVDSS : 600V ID : 0.02A RDS(ON) : 540Ω 3 General Description 1. Source 2. Gate 3. Drain The SW601Q is an N-channel power MOSFET using SAMWIN’s Advanced technology to provide the customers with high switching speed. Order Codes Item Sales Type 1 SW R 601Q Absolute maximum ratings Marking Date Code 2 1 Package SOT23 Packaging REEL Symbol Parameter VDSS VDGX ID IDM VGSS PD TJ TSTG, Drain to source voltage (Note 2) Drain to gate voltage (Note 2) Continuous drain current (@Tj=25oC) Drain current pulsed Gate to source voltage Total power dissipation (@Tj=25oC) Junction temperature Storage temperature Value Unit 600 V 600 V 0.02 A 0.08 A ±6 V 0.5 W + 150 oC -55 ~ + 150 oC Thermal characteristics Symbol Parameter Rthja Thermal resistance, Junction to ambient Value 250 Unit oC/W Notes: 1. Absolute maximum ratings are those valuesbeyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. TJ=+25°C~+150°C Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Apr. 2019. Rev. 6.0 1/6 SW601Q Electrical characteristic ( Tj = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Off characteristics BVDSS Drain to source breakdown voltage VGS=-5V,...