SW5N60

SAMWIN Features ■ High ruggedness ■ RDS(ON) (Max 2.2Ω)@VGS=10V ■ Gate Charge (Typical 22nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested SW5N60 N-channel TO-220F MOSFET TO-220F BVDSS : 600V ID : 5.0A RDS(ON) : 2.2ohm 1 2 3 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. 1 3 Order Codes Item 1 Sales Type SW F 5N60 Marking SW5N60 Package TO-220F Packaging TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC Continuous Drain Current (@TC Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC Derating Factor above 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. =25oC) (note 2) (note 1) (note 3) =25oC) =100oC) (note 1) Parameter Value 600 5.0* 3.15* 20 ±30 135 27 5 24 0.19 -55 ~ + 150 300 Unit V A A A V mJ mJ V/ns W W/oC oC oC *. Drain current is limited by junction temperature. Thermal characteristics Symbol Rthjc Rthcs Rthja Parameter...