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SAMWIN
Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 6...
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SAMWIN
Features
N-Channel
MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 60 V : 0.023ohm : 50 A : 30 nc : 130 W
SW50N06
General Description
This power
MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. D
G S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain to Source
Voltage Continuous Drain Current (@Tc=25 ) Continuous Drain Current (@Tc=100 Drain Current Pulsed Gate to Source
Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (@Tc=25 ) Derating Factor above 25 Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) ) (Note 1)
Parameter
Value
60 50 35 200 ±20 480 13 7 130 0.9 -55 ~ +150 300
Units
V A A A V mJ mJ V/ns W W/
Thermal Characteristics
Value Symbol
R R R
JC CS JA
Units Max
1.15 62.5 /W /W /W
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Min
-
Typ
0.5 -
1/6
REV2.1
05.07.21
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