SAMWIN
SW4N80B
N-channel TO-220F MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 4Ω)@VGS=10V ■ Gate Charge (Typical ...
SAMWIN
SW4N80B
N-channel TO-220F
MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 4Ω)@VGS=10V ■ Gate Charge (Typical 14nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-220F
TO-251N
1 2
3
1 2
3
1. Gate 2. Drain 3. Source
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power
MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
BVDSS : 800V ID : 4A RDS(ON) : 4ohm
2
1
3
Order Codes
Item Sales Type 1 SW F 4N80B 2 SW I 4N80B
Absolute maximum ratings
Marking SW4N80 SW4N80
Symbol
Parameter
VDSS ID IDM VGS EAS EAR
dv/dt
PD
TSTG, TJ
TL
Drain to Source
Voltage
Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed
(note 1)
Gate to Source
Voltage
...
