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SW1N80A

SEMIPOWER
Part Number SW1N80A
Manufacturer SEMIPOWER
Description MOSFET
Published Apr 20, 2017
Detailed Description SAMWIN SW1N80A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 16 Ω)@VGS=10V ■ Gate Charge (Max 7nC) ■ Imp...
Datasheet PDF File SW1N80A PDF File

SW1N80A
SW1N80A

Overview
SAMWIN SW1N80A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 16 Ω)@VGS=10V ■ Gate Charge (Max 7nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-92 12 3 1.
Gate 2.
Drain 3.
Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
BVDSS : 800V ID : 1.
0A RDS(ON) :16ohm 2 1 3 Order Codes Item 1 S...


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