SAMWIN
SW1N70C
Features
■ High ruggedness ■ RDS(ON) (Max 16 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capabi...
SAMWIN
SW1N70C
Features
■ High ruggedness ■ RDS(ON) (Max 16 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-92
12 3
1. Gate 2. Drain 3. Source
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power
MOSFET is usually used at AC adaptors and SMPS.
N-channel
MOSFET
BVDSS : 700V ID : 0.8A RDS(ON) : 16ohm
2
1 3
Order Codes
Item 1
Sales Type SW C 1N70C
Marking SW1N70C
Package TO-92
Packaging TAPE
Absolute maximum ratings
Symbol VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ TL
Parameter
Drain to Source
Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to Source
Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery...
