SW1N60

SAMWIN SW1N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-251 TO-252 TO-126 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 600V ID : 1.0A RDS(ON) : 12ohm 2 1 3 Order Codes Item 1 2 3 Sales Type SW L 1N60 SW I 1N60 SW D 1N60 Marking SW1N60 SW1N60 SW1N60 Package TO-126 TO-251 TO-252 Packaging TUBE TUBE REEL Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain ...