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■ High ruggedness ■ RDS(ON) (Max 0.52Ω)@VGS=10V ■ Gate Charge (Typical 29nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 1 2 3 1.Gate 2.Drain 3.Source General Description This power MOSFET is produced with advanced VDMOS technolo...

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